jiangsu changjiang ele c tron ics technology co., ltd t o -92s plastic-encapsulate transistors KTC3195 transist or (npn) features z small reverse transfer cap a citance z low noise figure maximum ra tings (t a =25 unless other w ise noted) symbol para mete r value unit v cbo coll ector-bas e voltage 40 v v ce o coll ector-emitter v oltage 30 v v eb o emitter-base v o ltage 4 v i c coll ector curr ent -continuous 20 ma p c coll ector po wer dissipation 400 mw t j junctio n temperature 150 t st g s t orage temperature -55-150 electrical char acteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp max u nit co llecto r-base breakdown voltage v (b r)cb o i c = 100 a, i e = 0 40 v co llecto r-emitter breakdown voltage v (b r)ce o i c =1 ma, i b = 0 30 v emitter-b a se breakdown voltage v ( br )ebo i e = 100 a, i c =0 4 v co llecto r cut-off current i cb o v cb = 40v , i e = 0 0.5 a emitter cut-off current i ebo v eb =4 v , i c = 0 0.5 a dc cu rr ent gain h fe v ce =6 v , i c = 1ma 40 200 t r ansition frequency f t v ce =6 v , i c = 1ma 300 550 mhz re v erse transfer capacitance c re v cb =6 v , i e = 0, f=1mhz 0.7 pf no ise fig ure nf 2.5 5 db po w er gain g pe v ce =6 v , i c = 1 ma,f=100mhz 18 db classific a tion of h fe rank r o y range 40-8 0 70-1 40 100-200 t o -92s 1. emit ter 2. collect or 3. base j c ( t www.cj-elec.com 1 a,jun,2014 www.cj-elec.com d,aug,2016 1 3 2
sy mb ol d imensions in millimeters dimensions in inches min. max. min. max. a 1.420 1.620 0.056 0.064 a1 0.660 0.860 0.026 0.034 b 0.330 0.480 0.013 0.019 b1 0.400 0.510 0.016 0.020 c 0.330 0.510 0.013 0.020 d 3.900 4.100 0.154 0.161 d1 2.280 2.680 0.090 0.106 e 3.050 3.250 0.120 0.128 e 1.270 typ. 0.050 typ. e1 2.440 2.640 0.096 0.104 l 15.100 15.500 0.594 0.610 45 typ. 45 typ. z z z f m h o h f f r p ' $ x j
z z z f m h o h f f r p ' $ x j
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